2SD1706-Q Bipolar Transistor

Characteristics of 2SD1706-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 130 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SD1706-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1706-Q transistor can have a current gain of 90 to 180. The gain of the 2SD1706 will be in the range from 60 to 260, for the 2SD1706-P it will be in the range from 130 to 260, for the 2SD1706-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1706-Q might only be marked "D1706-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1706-Q is the 2SB1155-Q.

Replacement and Equivalent for 2SD1706-Q transistor

You can replace the 2SD1706-Q with the 2SD1707 or 2SD1707-Q.
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