2SB1155-P Bipolar Transistor

Characteristics of 2SB1155-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -130 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 130 to 260
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1155-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1155-P transistor can have a current gain of 130 to 260. The gain of the 2SB1155 will be in the range from 90 to 260, for the 2SB1155-Q it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1155-P might only be marked "B1155-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1155-P is the 2SD1706-P.

Replacement and Equivalent for 2SB1155-P transistor

You can replace the 2SB1155-P with the 2SB1156 or 2SB1156-P.
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