2SB1156-P Bipolar Transistor
Characteristics of 2SB1156-P Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -130 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -20 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 130 to 260
- Transition Frequency, min: 25 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3PF
Pinout of 2SB1156-P
Classification of hFE
Marking
Complementary NPN transistor
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