2SB1154-Q Bipolar Transistor

Characteristics of 2SB1154-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -130 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1154-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1154-Q transistor can have a current gain of 90 to 180. The gain of the 2SB1154 will be in the range from 60 to 260, for the 2SB1154-P it will be in the range from 130 to 260, for the 2SB1154-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1154-Q might only be marked "B1154-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1154-Q is the 2SD1705-Q.

Replacement and Equivalent for 2SB1154-Q transistor

You can replace the 2SB1154-Q with the 2SA1141, 2SA1860, 2SA1860-Y, 2SA1909, 2SA1909-Y, 2SB1155, 2SB1155-Q, 2SB1156, 2SB1156-Q, 2SB1161, FJAF4210 or FJAF4210Y.
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