2SB1154 Bipolar Transistor

Characteristics of 2SB1154 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -130 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 60 to 260
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1154

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1154 transistor can have a current gain of 60 to 260. The gain of the 2SB1154-P will be in the range from 130 to 260, for the 2SB1154-Q it will be in the range from 90 to 180, for the 2SB1154-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1154 might only be marked "B1154".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1154 is the 2SD1705.
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