2SA699-Q Bipolar Transistor

Characteristics of 2SA699-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -32 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of 2SA699-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA699-Q transistor can have a current gain of 80 to 160. The gain of the 2SA699 will be in the range from 50 to 220, for the 2SA699-P it will be in the range from 50 to 100, for the 2SA699-R it will be in the range from 100 to 220.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA699-Q might only be marked "A699-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SA699-Q is the 2SC1226-Q.

Replacement and Equivalent for 2SA699-Q transistor

You can replace the 2SA699-Q with the 2SA636, 2SA636-L, 2SA636A, 2SA636A-L, 2SA699A or 2SA699A-Q.
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