2SA636A-L Bipolar Transistor

Characteristics of 2SA636A-L Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -70 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 45 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of 2SA636A-L

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA636A-L transistor can have a current gain of 80 to 160. The gain of the 2SA636A will be in the range from 40 to 250, for the 2SA636A-K it will be in the range from 120 to 250, for the 2SA636A-M it will be in the range from 50 to 100, for the 2SA636A-N it will be in the range from 40 to 60.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA636A-L might only be marked "A636A-L".

Complementary NPN transistor

The complementary NPN transistor to the 2SA636A-L is the 2SC1098A-L.
If you find an error please send an email to mail@el-component.com