2SA699 Bipolar Transistor

Characteristics of 2SA699 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -32 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 50 to 220
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of 2SA699

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA699 transistor can have a current gain of 50 to 220. The gain of the 2SA699-P will be in the range from 50 to 100, for the 2SA699-Q it will be in the range from 80 to 160, for the 2SA699-R it will be in the range from 100 to 220.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA699 might only be marked "A699".

Complementary NPN transistor

The complementary NPN transistor to the 2SA699 is the 2SC1226.

Replacement and Equivalent for 2SA699 transistor

You can replace the 2SA699 with the 2SA636, 2SA636A or 2SA699A.
If you find an error please send an email to mail@el-component.com