2SA636 Bipolar Transistor

Characteristics of 2SA636 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -70 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 40 to 250
  • Transition Frequency, min: 45 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of 2SA636

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA636 transistor can have a current gain of 40 to 250. The gain of the 2SA636-K will be in the range from 120 to 250, for the 2SA636-L it will be in the range from 80 to 160, for the 2SA636-M it will be in the range from 50 to 100, for the 2SA636-N it will be in the range from 40 to 60.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA636 might only be marked "A636".

Complementary NPN transistor

The complementary NPN transistor to the 2SA636 is the 2SC1098.

Replacement and Equivalent for 2SA636 transistor

You can replace the 2SA636 with the 2SA636A.
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