2SA562TM-O Bipolar Transistor

Characteristics of 2SA562TM-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -35 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA562TM-O

The 2SA562TM-O is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA562TM-O transistor can have a current gain of 70 to 140. The gain of the 2SA562TM will be in the range from 70 to 240, for the 2SA562TM-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA562TM-O might only be marked "A562TM-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SA562TM-O is the 2SC1959-O.

SMD Version of 2SA562TM-O transistor

The 2SA1182 (SOT-23), 2SA1182-O (SOT-23), 2SA1588 (SOT-323), 2SA1588-O (SOT-323), FJX1182 (SOT-323), FJX1182-O (SOT-323), KSA1182 (SOT-23), KSA1182-O (SOT-23), KTA1505 (SOT-23), KTA1505O (SOT-23), KTA1505S (SOT-23) and KTA1505S-O (SOT-23) is the SMD version of the 2SA562TM-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA562TM-O transistor

You can replace the 2SA562TM-O with the 2N3703, 2N4951, 2N4954, 2SA1020, 2SA1020O, 2SA1270, 2SA1270-O, 2SA1283, 2SA1522, 2SA1523, 2SA1524, 2SA1525, 2SA1526, 2SA1527, 2SA1528, 2SA1529, 2SA200, 2SA200-O, 2SA984, 2SA993, 2SB764, BC636, BC638, KSA708C, KSA708CO, KSA931, KSA931O, KTA1270, KTA1270O, KTA1281, KTA1281O, KTA200, KTA200-O, KTA708 or KTB764.
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