BC636 Bipolar Transistor

Characteristics of BC636 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 40 to 250
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of BC636

The BC636 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BC636 is the BC635.

Replacement and Equivalent for BC636 transistor

You can replace the BC636 with the KSA708C.
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