2SA499-Y Bipolar Transistor

Characteristics of 2SA499-Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 250 MHz
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-18

Pinout of 2SA499-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA499-Y transistor can have a current gain of 100 to 200. The gain of the 2SA499 will be in the range from 60 to 200, for the 2SA499-O it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA499-Y might only be marked "A499-Y".

Complementary NPN transistor

The complementary NPN transistor to the 2SA499-Y is the 2SC979-Y.

SMD Version of 2SA499-Y transistor

The 2SA812 (SOT-23), 2SA812-M4 (SOT-23), KSA812 (SOT-23) and KSA812-O (SOT-23) is the SMD version of the 2SA499-Y transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA499-Y transistor

You can replace the 2SA499-Y with the 2N2907, 2N2907A, 2N3251, 2N3496, 2N4034, BC297, BCY70, BCY71 or NTE159M.
If you find an error please send an email to mail@el-component.com