2SA499 Bipolar Transistor

Characteristics of 2SA499 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 250 MHz
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-18

Pinout of 2SA499

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA499 transistor can have a current gain of 60 to 200. The gain of the 2SA499-O will be in the range from 60 to 120, for the 2SA499-Y it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA499 might only be marked "A499".

Complementary NPN transistor

The complementary NPN transistor to the 2SA499 is the 2SC979.

Replacement and Equivalent for 2SA499 transistor

You can replace the 2SA499 with the 2N3496 or BCY70.
If you find an error please send an email to mail@el-component.com