2SA499-O Bipolar Transistor

Characteristics of 2SA499-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 250 MHz
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-18

Pinout of 2SA499-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA499-O transistor can have a current gain of 60 to 120. The gain of the 2SA499 will be in the range from 60 to 200, for the 2SA499-Y it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA499-O might only be marked "A499-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SA499-O is the 2SC979-O.

Replacement and Equivalent for 2SA499-O transistor

You can replace the 2SA499-O with the 2N2906, 2N2906A, 2N3250, 2N3496 or BCY70.
If you find an error please send an email to mail@el-component.com