2SC979-O Bipolar Transistor

Characteristics of 2SC979-O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 70 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.3 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 250 MHz
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-18

Pinout of 2SC979-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC979-O transistor can have a current gain of 70 to 140. The gain of the 2SC979 will be in the range from 70 to 240, for the 2SC979-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC979-O might only be marked "C979-O".

Complementary PNP transistor

The complementary PNP transistor to the 2SC979-O is the 2SA499-O.

Replacement and Equivalent for 2SC979-O transistor

You can replace the 2SC979-O with the 2SC979A.
If you find an error please send an email to mail@el-component.com