2SA1386-Y Bipolar Transistor

Characteristics of 2SA1386-Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -4 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 130 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 40 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SA1386-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1386-Y transistor can have a current gain of 90 to 180. The gain of the 2SA1386 will be in the range from 50 to 180, for the 2SA1386-O it will be in the range from 50 to 100, for the 2SA1386-P it will be in the range from 70 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1386-Y might only be marked "A1386-Y".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1386-Y is the 2SC3519-Y.

Replacement and Equivalent for 2SA1386-Y transistor

You can replace the 2SA1386-Y with the 2SA1386A, 2SA1386A-O, 2SA1386A-P, 2SA1386A-Y, 2SA1492, 2SA1492-Y, 2SA2151, 2SA2151-Y, 2SA2151A, 2SA2151A-O, 2SA2151A-P, 2SA2151A-Y, 2SB1163, MJW1302A or MJW1302AG.
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