2SA1386-O Bipolar Transistor

Characteristics of 2SA1386-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -4 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 130 W
  • DC Current Gain (hfe): 50 to 100
  • Transition Frequency, min: 40 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SA1386-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1386-O transistor can have a current gain of 50 to 100. The gain of the 2SA1386 will be in the range from 50 to 180, for the 2SA1386-P it will be in the range from 70 to 140, for the 2SA1386-Y it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1386-O might only be marked "A1386-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1386-O is the 2SC3519-O.

Replacement and Equivalent for 2SA1386-O transistor

You can replace the 2SA1386-O with the 2SA1294, 2SA1294-O, 2SA1386A, 2SA1386A-O, 2SA1386A-P, 2SA1386A-Y, 2SA1492, 2SA1492-O, 2SA2151, 2SA2151-O, 2SA2151A, 2SA2151A-O, 2SA2151A-P, 2SA2151A-Y, 2SA2223, 2SA2223-O, 2SA2223A, 2SA2223A-O, MAG9413, MAG9413A, MJW1302A or MJW1302AG.
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