2SA1016KH Bipolar Transistor

Characteristics of 2SA1016KH Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 480 to 960
  • Transition Frequency, min: 110 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1016KH

The 2SA1016KH is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1016KH transistor can have a current gain of 480 to 960. The gain of the 2SA1016K will be in the range from 160 to 960, for the 2SA1016KF it will be in the range from 160 to 320, for the 2SA1016KG it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1016KH might only be marked "A1016KH".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1016KH is the 2SC2326KH.
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