2SA1009A-L Bipolar Transistor

Characteristics of 2SA1009A-L Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -400 V
  • Collector-Base Voltage, max: -400 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 30 to 60
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1009A-L

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1009A-L transistor can have a current gain of 30 to 60. The gain of the 2SA1009A will be in the range from 20 to 200, for the 2SA1009A-H it will be in the range from 100 to 200, for the 2SA1009A-J it will be in the range from 60 to 120, for the 2SA1009A-K it will be in the range from 40 to 80, for the 2SA1009A-M it will be in the range from 20 to 40.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1009A-L might only be marked "A1009A-L".

Replacement and Equivalent for 2SA1009A-L transistor

You can replace the 2SA1009A-L with the MJE5852 or MJE5852G.
If you find an error please send an email to mail@el-component.com