2SA1007A-R Bipolar Transistor

Characteristics of 2SA1007A-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SA1007A-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1007A-R transistor can have a current gain of 60 to 120. The gain of the 2SA1007A will be in the range from 40 to 320, for the 2SA1007A-p it will be in the range from 160 to 320, for the 2SA1007A-Q it will be in the range from 100 to 200, for the 2SA1007A-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1007A-R might only be marked "A1007A-R".

Replacement and Equivalent for 2SA1007A-R transistor

You can replace the 2SA1007A-R with the 2SA1072A, 2SA1073, 2SA908, 2SA909, 2SB554, 2SB600, 2SB600-R, 2SB697K, 2SB697K-D, 2SB705A, 2SB705A-R, 2SB705B, 2SB705B-R, 2SB706, 2SB706-R, 2SB706A, 2SB706A-R, 2SB722, 2SB723, 2SB723-B, MJ15012 or MJ15012G.
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