2SA1007A Bipolar Transistor

Characteristics of 2SA1007A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 40 to 320
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SA1007A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1007A transistor can have a current gain of 40 to 320. The gain of the 2SA1007A-p will be in the range from 160 to 320, for the 2SA1007A-Q it will be in the range from 100 to 200, for the 2SA1007A-R it will be in the range from 60 to 120, for the 2SA1007A-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1007A might only be marked "A1007A".

Replacement and Equivalent for 2SA1007A transistor

You can replace the 2SA1007A with the 2SA908, 2SA909 or 2SB697K.
If you find an error please send an email to mail@el-component.com