2SB705B-R Bipolar Transistor

Characteristics of 2SB705B-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 120 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 17 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3

Pinout of 2SB705B-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB705B-R transistor can have a current gain of 60 to 120. The gain of the 2SB705B will be in the range from 40 to 200, for the 2SB705B-Q it will be in the range from 100 to 200, for the 2SB705B-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB705B-R might only be marked "B705B-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB705B-R is the 2SD745B-R.

Replacement and Equivalent for 2SB705B-R transistor

You can replace the 2SB705B-R with the 2SA1073, 2SA909, 2SB554, 2SB600, 2SB600-R, 2SB697K, 2SB697K-D, 2SB706, 2SB706-R, 2SB706A, 2SB706A-R, 2SB722, 2SB723, 2SB723-B, MJ15012 or MJ15012G.
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