2SA1007A-p Bipolar Transistor

Characteristics of 2SA1007A-p Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SA1007A-p

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1007A-p transistor can have a current gain of 160 to 320. The gain of the 2SA1007A will be in the range from 40 to 320, for the 2SA1007A-Q it will be in the range from 100 to 200, for the 2SA1007A-R it will be in the range from 60 to 120, for the 2SA1007A-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1007A-p might only be marked "A1007A-p".

Replacement and Equivalent for 2SA1007A-p transistor

You can replace the 2SA1007A-p with the 2SA908, 2SA909, 2SB697K, 2SB697K-F or 2SB722.
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