2SA1007A-p Bipolar Transistor
Characteristics of 2SA1007A-p Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -150 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -10 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 160 to 320
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-3
Pinout of 2SA1007A-p
Classification of hFE
Marking
Replacement and Equivalent for 2SA1007A-p transistor
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