2N6512 Bipolar Transistor

Characteristics of 2N6512 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 300 V
  • Collector-Base Voltage, max: 400 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 120 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6512

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6512 transistor

You can replace the 2N6512 with the 2N6251, 2N6513, 2N6514, 2N6676, 2N6677, 2N6678, 2SD822, BUX48, BUX48A, MJ12021, MJ12022, MJ16006 or MJ16008.
If you find an error please send an email to mail@el-component.com