2N6308 Bipolar Transistor

Characteristics of 2N6308 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 350 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 12 to 60
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6308

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6308 transistor

You can replace the 2N6308 with the 2N6545, 2N6547, 2N6677, 2N6678, BUX48, BUX48A, MJ12021, MJ12022, MJ16006, MJ16008 or MJ8504.
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