2N5401Y Bipolar Transistor

Characteristics of 2N5401Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.6 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 120 to 240
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2N5401Y

The 2N5401Y is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N5401Y is the 2N5551Y.

SMD Version of 2N5401Y transistor

The 2N5401S (SOT-23), DXT5401 (SOT-89), DZT5401 (SOT-223), KST5401 (SOT-23), MMBT5401 (SOT-23) and PMBT5401 (SOT-23) is the SMD version of the 2N5401Y transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2N5401Y transistor

You can replace the 2N5401Y with the 2N5401, 2SA709, 2SA709Y, KSA709 or KSA709Y.
If you find an error please send an email to mail@el-component.com