2N5551Y Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 160 V
• Collector-Base Voltage, max: 180 V
• Emitter-Base Voltage, max: 6 V
• Collector Current − Continuous, max: 0.6 A
• Collector Dissipation: 0.625 W
• DC Current Gain (h_fe): 180 to 240
• Transition Frequency, min: 100 MHz
• Noise Figure, max: 8 dB
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-92

The 2N5551Y is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the 2N5551Y is the 2N5401Y.The 2N5551S (SOT-23), DXT5551 (SOT-89), DZT5551 (SOT-223), FZT696B (SOT-223), KST43 (SOT-23), KST5551 (SOT-23), MMBT5551 (SOT-23) and PMBT5551 (SOT-23) is the SMD version of the 2N5551Y transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the 2N5551Y with the 2N5551, 2N5551G, 2N5832, 2N5833 or NTE194.