IRF1010N MOSFET
Specifications of IRF1010N MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 11 mΩ
- Continuous Drain Current: 72 A
- Total Gate Charge: 80 nC
- Power Dissipation: 130 W
- Package: TO-220AB
Pinout of IRF1010N
Replacement and Equivalent of IRF1010N Transistor
You can replace the IRF1010N with the
IRF1010EZ,
IRF1010Z,
IRF1405,
IRF1405Z,
IRF1407,
IRF1607,
IRF2805,
IRF2807Z,
IRF2907Z,
IRF3205,
IRF3205Z,
IRF3305,
IRF3805,
IRF3808,
IRFB3006,
IRFB3006G,
IRFB3077,
IRFB3077G,
IRFB3206,
IRFB3206G,
IRFB3207,
IRFB3207Z,
IRFB3207ZG,
IRFB3256,
IRFB3306,
IRFB3306G,
IRFB3307,
IRFB3307Z,
IRFB3307ZG,
IRFB3607,
IRFB3607G,
IRFB4110,
IRFB4110G,
IRFB4115,
IRFB4115G,
IRFB4310,
IRFB4310G,
IRFB4310Z,
IRFB4310ZG,
IRFB4410,
IRFB4410Z,
IRFB4410ZG