IRF2805 MOSFET
Specifications of IRF2805 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 4.7 mΩ
- Continuous Drain Current: 175 A
- Total Gate Charge: 150 nC
- Power Dissipation: 330 W
- Package: TO-220AB