IRFB3306G MOSFET

Specifications of IRFB3306G MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 60 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 4.2 mΩ
  • Continuous Drain Current: 160 A
  • Total Gate Charge: 85 nC
  • Power Dissipation: 230 W
  • Package: TO-220AB

Pinout of IRFB3306G

IRFB3306G pinout

Replacement and Equivalent of IRFB3306G Transistor

You can replace the IRFB3306G with the IRFB3006, IRFB3006G, IRFB3077, IRFB3077G, IRFB3206, IRFB3206G, IRFB3207Z, IRFB3207ZG, IRFB3256, IRFB3306