STD13007P-B Bipolar Transistor
Characteristics of STD13007P-B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 400 V
- Collector-Base Voltage, max: 700 V
- Emitter-Base Voltage, max: 9 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 87 W
- DC Current Gain (hfe): 25 to 45
- Transition Frequency, min: 14 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Pinout of STD13007P-B
Classification of hFE
Replacement and Equivalent for STD13007P-B transistor
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