KSE13007 Bipolar Transistor

Characteristics of KSE13007 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 8 to 60
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular MJE13007 transistor

Pinout of KSE13007

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSE13007 transistor can have a current gain of 8 to 60. The gain of the KSE13007H1 will be in the range from 15 to 28, for the KSE13007H2 it will be in the range from 26 to 39.

Marking

The KSE13007 transistor is marked as "E13007".

Replacement and Equivalent for KSE13007 transistor

You can replace the KSE13007 with the FJP13007, KSE13007F, MJE13007, MJE13007A, MJE13007G or STD13007F.
If you find an error please send an email to mail@el-component.com