MJE13007 Bipolar Transistor

Characteristics of MJE13007 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 8 to 60
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE13007

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE13007 transistor

You can replace the MJE13007 with the FJP13007, KSE13007, KSE13007F, MJE13007A, MJE13007G or STD13007F.

Lead-free Version

The MJE13007G transistor is the lead-free version of the MJE13007.
If you find an error please send an email to mail@el-component.com