NTE181 Bipolar Transistor

Characteristics of NTE181 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 90 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 4 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 25 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of NTE181

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the NTE181 is the NTE180.

Replacement and Equivalent for NTE181 transistor

You can replace the NTE181 with the 2N5671, 2N5672, MJ802 or MJ802G.
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