MJ802G Bipolar Transistor

Characteristics of MJ802G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 90 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 4 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 25 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ802G is the lead-free version of the MJ802 transistor

Pinout of MJ802G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ802G is the MJ4502G.

Replacement and Equivalent for MJ802G transistor

You can replace the MJ802G with the 2N5671, 2N5672, MJ802 or NTE181.
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