MJ802 Bipolar Transistor

Characteristics of MJ802 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 90 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 4 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 25 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ802

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ802 is the MJ4502.

Replacement and Equivalent for MJ802 transistor

You can replace the MJ802 with the 2N5671, 2N5672, MJ802G or NTE181.

Lead-free Version

The MJ802G transistor is the lead-free version of the MJ802.
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