MJ802 Bipolar Transistor
Characteristics of MJ802 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 90 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 4 V
- Collector Current − Continuous, max: 30 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 25 to 100
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of MJ802
Complementary PNP transistor
Replacement and Equivalent for MJ802 transistor
Lead-free Version
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