MJE271G Bipolar Transistor
Characteristics of MJE271G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 15 W
- DC Current Gain (hfe): 1500
- Transition Frequency, min: 6 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
- The MJE271G is the lead-free version of the MJE271 transistor
Pinout of MJE271G
Complementary NPN transistor
Replacement and Equivalent for MJE271G transistor
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