MJE271G Bipolar Transistor

Characteristics of MJE271G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 1500
  • Transition Frequency, min: 6 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The MJE271G is the lead-free version of the MJE271 transistor

Pinout of MJE271G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE271G is the MJE270G.

Replacement and Equivalent for MJE271G transistor

You can replace the MJE271G with the 2SB1149, 2SB1149-K, 2SB1149-L, 2SB1149-M, KSB1149, KSB1149-G, KSB1149-O, KSB1149-Y or MJE271.
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