KSB1149-Y Bipolar Transistor
Characteristics of KSB1149-Y Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -8 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 15 W
- DC Current Gain (hfe): 4000 to 12000
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular 2SB1149-L transistor
Pinout of KSB1149-Y
Classification of hFE
Replacement and Equivalent for KSB1149-Y transistor
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