MJE271 Bipolar Transistor

Characteristics of MJE271 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 1500
  • Transition Frequency, min: 6 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE271

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE271 is the MJE270.

Replacement and Equivalent for MJE271 transistor

You can replace the MJE271 with the 2SB1149, 2SB1149-K, 2SB1149-L, 2SB1149-M, KSB1149, KSB1149-G, KSB1149-O, KSB1149-Y or MJE271G.

Lead-free Version

The MJE271G transistor is the lead-free version of the MJE271.
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