MJE18006G Bipolar Transistor
Characteristics of MJE18006G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 450 V
- Collector-Base Voltage, max: 1000 V
- Emitter-Base Voltage, max: 9 V
- Collector Current − Continuous, max: 6 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 14 to 34
- Transition Frequency, min: 14 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
- The MJE18006G is the lead-free version of the MJE18006 transistor
Pinout of MJE18006G
Replacement and Equivalent for MJE18006G transistor
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