MJE18006G Bipolar Transistor

Characteristics of MJE18006G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 450 V
  • Collector-Base Voltage, max: 1000 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 14 to 34
  • Transition Frequency, min: 14 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE18006G is the lead-free version of the MJE18006 transistor

Pinout of MJE18006G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE18006G transistor

You can replace the MJE18006G with the 2SC3056A, MJE18006, MJE18008, MJE18008G, MJF18006, MJF18006G, MJF18008 or MJF18008G.
If you find an error please send an email to mail@el-component.com