MJE18008G Bipolar Transistor

Characteristics of MJE18008G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 450 V
  • Collector-Base Voltage, max: 1000 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 14 to 34
  • Transition Frequency, min: 13 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE18008G is the lead-free version of the MJE18008 transistor

Pinout of MJE18008G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE18008G transistor

You can replace the MJE18008G with the MJE18008, MJF18008 or MJF18008G.
If you find an error please send an email to mail@el-component.com