MJE18006 Bipolar Transistor
Characteristics of MJE18006 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 450 V
- Collector-Base Voltage, max: 1000 V
- Emitter-Base Voltage, max: 9 V
- Collector Current − Continuous, max: 6 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 14 to 34
- Transition Frequency, min: 14 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of MJE18006
Replacement and Equivalent for MJE18006 transistor
Lead-free Version
If you find an error please send an email to mail@el-component.com