MJE13006 Bipolar Transistor
Characteristics of MJE13006 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 300 V
- Collector-Base Voltage, max: 600 V
- Emitter-Base Voltage, max: 9 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 80 W
- DC Current Gain (hfe): 8 to 60
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of MJE13006
Replacement and Equivalent for MJE13006 transistor
If you find an error please send an email to mail@el-component.com