KTC3876S-GL Bipolar Transistor

Characteristics of KTC3876S-GL Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 35 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 300 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of KTC3876S-GL

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTC3876S-GL transistor can have a current gain of 200 to 400. The gain of the KTC3876S will be in the range from 70 to 400, for the KTC3876S-O it will be in the range from 70 to 140, for the KTC3876S-Y it will be in the range from 120 to 240.

Marking

The KTC3876S-GL transistor is marked as "WG".

Replacement and Equivalent for KTC3876S-GL transistor

You can replace the KTC3876S-GL with the 2SC2859, 2SC2859-GR, 2SC3912, 2SC3913, 2SC3914, 2SC3915, 2STR1160, 2STR1230, BC817, BC817-25, BCV72, BCW32, BCW65, BCW65B, BCW66, BCW66G, BCX19, FMMT619, FMMTA05, KST05, KTC3876, KTC3876GL, MMBT100, MMBTA05 or SMBTA05.
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