BCW65B Bipolar Transistor

Characteristics of BCW65B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 32 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 160 to 400
  • Transition Frequency, min: 170 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW65B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW65B transistor can have a current gain of 160 to 400. The gain of the BCW65 will be in the range from 100 to 630, for the BCW65A it will be in the range from 100 to 250, for the BCW65C it will be in the range from 250 to 630.

Complementary PNP transistor

The complementary PNP transistor to the BCW65B is the BCW67B.

Replacement and Equivalent for BCW65B transistor

You can replace the BCW65B with the BCW66, BCW66G or FMMT619.
If you find an error please send an email to mail@el-component.com