2STR1160 Bipolar Transistor

Characteristics of 2STR1160 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 180 to 560
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of 2STR1160

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2STR1160 is the 2STR2160.

Replacement and Equivalent for 2STR1160 transistor

You can replace the 2STR1160 with the FMMT620.
If you find an error please send an email to mail@el-component.com