2STR1160 Bipolar Transistor
Characteristics of 2STR1160 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 180 to 560
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-23
Pinout of 2STR1160
Complementary PNP transistor
Replacement and Equivalent for 2STR1160 transistor
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