BUL128D-B Bipolar Transistor
Characteristics of BUL128D-B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 400 V
- Collector-Base Voltage, max: 700 V
- Emitter-Base Voltage, max: 9 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 70 W
- DC Current Gain (hfe): 12 to 32
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BUL128D-B
Replacement and Equivalent for BUL128D-B transistor
If you find an error please send an email to mail@el-component.com