BCP55-10 Bipolar Transistor

Characteristics of BCP55-10 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 1.5 W
  • DC Current Gain (hfe): 63 to 160
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-223

Pinout of BCP55-10

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BCP55-10 is the BCP52-10.

Replacement and Equivalent for BCP55-10 transistor

You can replace the BCP55-10 with the BCP55, BCP56, BCP56-10, BDP951, BDP953, BDP955 or NZT44H8.
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