BCP56-10 Bipolar Transistor
Characteristics of BCP56-10 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 1.5 W
- DC Current Gain (hfe): 63 to 160
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-223
Pinout of BCP56-10
Complementary PNP transistor
Replacement and Equivalent for BCP56-10 transistor
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