BDP951 Bipolar Transistor

Characteristics of BDP951 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 3 W
  • DC Current Gain (hfe): 40 to 475
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-223

Pinout of BDP951

Here is an image showing the pin diagram of this transistor.

Marking

The BDP951 transistor is marked as "BDP951".

Complementary PNP transistor

The complementary PNP transistor to the BDP951 is the BDP952.

Replacement and Equivalent for BDP951 transistor

You can replace the BDP951 with the BDP953 or BDP955.
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